文献
J-GLOBAL ID:201902220663556700
整理番号:19A2117886
バルクSiプラットフォーム上のOバンドLDの不均一集積【JST・京大機械翻訳】
Heterogeneous Integration of O-band LDs on bulk-Si Platform
著者 (7件):
Cha Jungho
(Memory Technology Development, Semiconductor R&D center, Samsung Electronics, Semiconductor R&D center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Korea)
,
Shin Dongjae
(Samsung Electronics, Imaging Device Lab, Samsung Advanced Institute of Technology, Suwon, Korea)
,
Shin Yongwhak
(Memory Technology Development, Semiconductor R&D center, Samsung Electronics, Semiconductor R&D center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Korea)
,
Cho Kwansik
(Memory Technology Development, Semiconductor R&D center, Samsung Electronics, Semiconductor R&D center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Korea)
,
Ha Kyoungho
(Samsung Electronics, Imaging Device Lab, Samsung Advanced Institute of Technology, Suwon, Korea)
,
Lee Kyupil
(Memory Technology Development, Semiconductor R&D center, Samsung Electronics, Semiconductor R&D center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Korea)
,
Kang Ho-Kyu
(Memory Technology Development, Semiconductor R&D center, Samsung Electronics, Semiconductor R&D center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do, 18448, Korea)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
OECC/PSC
ページ:
1-3
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)