文献
J-GLOBAL ID:201902223312294038
整理番号:19A0175407
分子ビームエピタクシーによる(001)Ge基板上のGaSb/GaAs量子ドットの成長速度依存特性【JST・京大機械翻訳】
Growth-Rate-Dependent Properties of GaSb/GaAs Quantum Dots on (001) Ge Substrate by Molecular Beam Epitaxy
著者 (15件):
Zon
(Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand)
,
Phienlumlert Pakawat
(Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand)
,
Thainoi Supachok
(Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand)
,
Kiravittaya Suwit
(Advanced Optical Technology Laboratory (AOT Lab), Department of Electrical and Computer Engineering, Faculty of Engineering, Naresuan University, Phitsanulok, 65000, Thailand)
,
Tandaechanurat Aniwat
(International School of Engineering (ISE), Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand)
,
Nuntawong Noppadon
(National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency (NSTDA), Pathumthani, 12120, Thailand)
,
Sopitpan Suwat
(Thai Microelectronics Center (TMEC), National Science and Technology Development Agency (NSTDA), Chachoengsao, 24000, Thailand)
,
Yordsri Visittapong
(National Metal and Materials Technology Center (MTEC), National Science and Technology Development Agency (NSTDA), Pathumthani, 12120, Thailand)
,
Thanachayanont Chanchana
(National Metal and Materials Technology Center (MTEC), National Science and Technology Development Agency (NSTDA), Pathumthani, 12120, Thailand)
,
Kanjanachuchai Songphol
(Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand)
,
Ratanathammaphan Somchai
(Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand)
,
Panyakeow Somsak
(Semiconductor Device Research Laboratory (SDRL), Department of Electrical Engineering, Faculty of Engineering, Chulalongkorn University, Bangkok, 10330, Thailand)
,
Ota Yasutomo
(Institute for Nano Quantum Information Electronics and Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505, Japan)
,
Iwamoto Satoshi
(Institute for Nano Quantum Information Electronics and Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505, Japan)
,
Arakawa Yasuhiko
(Institute for Nano Quantum Information Electronics and Institute of Industrial Science, The University of Tokyo, Tokyo, 153-8505, Japan)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
216
号:
1
ページ:
e1800499
発行年:
2019年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)