文献
J-GLOBAL ID:201902223430876070
整理番号:19A0658730
高κ誘電体の原子層堆積のためのサブnm薄SiO_2層によるMOS_2官能化【JST・京大機械翻訳】
MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics
著者 (18件):
Zhang Haodong
(Department of Chemistry, KU Leuven, Belgium)
,
Zhang Haodong
(Imec, Belgium)
,
Arutchelvan Goutham
(Imec, Belgium)
,
Arutchelvan Goutham
(Department of Materials Engineering, KU Leuven, Belgium)
,
Meersschaut Johan
(Imec, Belgium)
,
Gaur Abhinav
(Imec, Belgium)
,
Gaur Abhinav
(Department of Materials Engineering, KU Leuven, Belgium)
,
Conard Thierry
(Imec, Belgium)
,
Bender Hugo
(Imec, Belgium)
,
Lin Dennis
(Imec, Belgium)
,
Asselberghs Inge
(Imec, Belgium)
,
Heyns Marc
(Imec, Belgium)
,
Heyns Marc
(Department of Materials Engineering, KU Leuven, Belgium)
,
Radu Iuliana
(Imec, Belgium)
,
Vandervorst Wilfried
(Imec, Belgium)
,
Vandervorst Wilfried
(Department of Physics and Astronomy, KU Leuven, Belgium)
,
Delabie Annelies
(Department of Chemistry, KU Leuven, Belgium)
,
Delabie Annelies
(Imec, Belgium)
資料名:
Chemistry of Materials
(Chemistry of Materials)
巻:
29
号:
16
ページ:
6772-6780
発行年:
2017年
JST資料番号:
T0893A
ISSN:
0897-4756
CODEN:
CMATEX
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)