文献
J-GLOBAL ID:201902224984140468
整理番号:19A1413805
Siナノ結晶/SiO_2多層におけるナノスケールでのリンとホウ素の共ドーピング挙動【JST・京大機械翻訳】
The phosphorus and boron co-doping behaviors at nanoscale in Si nanocrystals/SiO2 multilayers
著者 (7件):
Li Dongke
(School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China)
,
Jiang Yicheng
(School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China)
,
Zhang Pei
(Henan Key Lab of Information-based Electrical Appliances, College of Electrical and Information Engineering, Zhengzhou University of Light Industry, Zhengzhou 450002, China)
,
Shan Dan
(School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China)
,
Xu Jun
(School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China)
,
Li Wei
(School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China)
,
Chen Kunji
(School of Electronic Science and Engineering, National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing University, Nanjing 210000, China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
110
号:
23
ページ:
233105-233105-5
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)