文献
J-GLOBAL ID:201902229021589159
整理番号:19A1408922
溶液プロセスを用いた高性能薄膜トランジスタのためのシリコンカチオン混合インジウム亜鉛酸化物界面【JST・京大機械翻訳】
Silicon Cations Intermixed Indium Zinc Oxide Interface for High-Performance Thin-Film Transistors Using a Solution Process
著者 (6件):
Na Jae Won
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea)
,
Rim You Seung
(School of Intelligent Mechatronic Engineering, Sejong University, Seoul, Republic of Korea)
,
Kim Hee Jun
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea)
,
Lee Jin Hyeok
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea)
,
Hong Seonghwan
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea)
,
Kim Hyun Jae
(School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
9
号:
35
ページ:
29849-29856
発行年:
2017年09月06日
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)