文献
J-GLOBAL ID:201902229744377911
整理番号:19A1465467
多量にドープした[数式:原文を参照]チャネルを持つデバイスにおけるスピンドリフトの定量化【JST・京大機械翻訳】
Quantification of Spin Drift in Devices with a Heavily Doped [Formula : see text] Channel
著者 (11件):
Spiesser A.
(Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
,
Fujita Y.
(Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
,
Saito H.
(Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
,
Yamada S.
(Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan)
,
Yamada S.
(Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan)
,
Hamaya K.
(Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan)
,
Hamaya K.
(Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan)
,
Mizubayashi W.
(Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
,
Endo K.
(Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
,
Yuasa S.
(Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
,
Jansen R.
(Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan)
資料名:
Physical Review Applied
(Physical Review Applied)
巻:
11
号:
4
ページ:
044020
発行年:
2019年
JST資料番号:
W3691A
ISSN:
2331-7019
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)