文献
J-GLOBAL ID:201902231101517437
整理番号:19A2699338
SiC Schottkyダイオードにおける重イオン誘起単一事象バーンアウト:安全な動作領域【JST・京大機械翻訳】
Heavy-Ion-Induced Single Event Burnout in SiC Schottky Diodes: Safe Operating Area
著者 (7件):
Gromova P. S.
(JSC “Specialized Electronic Systems” and Centre of Extremal Applied Electronics of NRNU MEPhI,,,Kashirskoe shosse, 31, Moscow,,Russia)
,
Davydov G. G.
(JSC “Specialized Electronic Systems” and Centre of Extremal Applied Electronics of NRNU MEPhI,,,Kashirskoe shosse, 31, Moscow,,Russia)
,
Tararaksin A. S.
(JSC “Specialized Electronic Systems” and Centre of Extremal Applied Electronics of NRNU MEPhI,,,Kashirskoe shosse, 31, Moscow,,Russia)
,
Kolosova A. S.
(JSC “Specialized Electronic Systems” and Centre of Extremal Applied Electronics of NRNU MEPhI,,,Kashirskoe shosse, 31, Moscow,,Russia)
,
Boychenko D. V.
(JSC “Specialized Electronic Systems” and Centre of Extremal Applied Electronics of NRNU MEPhI,,,Kashirskoe shosse, 31, Moscow,,Russia)
,
Vyuginov V. N.
(Svetlana-Electronpribor JSC,,,St. Petersburg.,,)
,
Luchinin V. V.
(Saint Petersburg Electrotechnical University “LETI”,,,St. Petersburg,,)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
MIEL
ページ:
71-74
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)