文献
J-GLOBAL ID:201902231634981963
整理番号:19A1415107
共振器内空間フィルタを用いた量子カスケードレーザの位相同期アレイ【JST・京大機械翻訳】
Phase-locked array of quantum cascade lasers with an intracavity spatial filter
著者 (12件):
Jia Zhiwei
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Wang Lei
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Zhang Jinchuan
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Zhao Yue
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Liu Chuanwei
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Zhai Shenqiang
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Zhuo Ning
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Liu JunQi
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Wang LiJun
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Liu ShuMan
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Liu Fengqi
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
,
Wang Zhanguo
(Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, People’s Republic of China)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
6
ページ:
061108-061108-5
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)