文献
J-GLOBAL ID:201902232073724418
整理番号:19A1305671
低温溶液プロセスにより作製した酸化インジウム亜鉛薄膜トランジスタへのストロンチウムドーピングの効果【JST・京大機械翻訳】
Effect of strontium doping on indium zinc oxide thin film transistors fabricated by low-temperature solution process
著者 (10件):
Kim Jin-Hyun
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Nguyen Manh-Cuong
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Nguyen An Hoang-Thuy
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Kim Sang-Woo
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Choi Su-Jin
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Cheon Jong-Gyu
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Ji Hyung-Min
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Yu Kyoung-Moon
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Cho Seong-Yong
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
,
Choi Rino
(Department of Materials Science and Engineering, Inha University, Incheon 22212, Korea)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
37
号:
3
ページ:
032201-032201-4
発行年:
2019年
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)