文献
J-GLOBAL ID:201902233360779673
整理番号:19A1312986
照射によって引き起こされたSi/SiO_2界面における照射損傷の原子および電子分析:第一原理計算【JST・京大機械翻訳】
Atomic and electron analyzing of irradiation damage in Si/SiO2 interfaces caused by irradiation: First-principle calculation
著者 (8件):
Wei Yidan
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
,
Li Xingji
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
,
Liu Chaoming
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
,
Liu Yong
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
,
Zhao Jinyu
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
,
Dong Shangli
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
,
Li Hongxia
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
,
Wang Qingyan
(School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China)
資料名:
Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms
(Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms)
巻:
451
ページ:
89-92
発行年:
2019年
JST資料番号:
H0899A
ISSN:
0168-583X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)