文献
J-GLOBAL ID:201902235461736534
整理番号:19A1416646
TiN中間層におけるAlNのその場原子層ラメラドーピングによる二層金属ゲートの仕事関数の調整【JST・京大機械翻訳】
Tuning of the work function of bilayer metal gate by in-situ atomic layer lamellar doping of AlN in TiN interlayer
著者 (6件):
Huang Kuei-Wen
(Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan)
,
Cheng Po-Hsien
(Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan)
,
Lin Yu-Shu
(Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan)
,
Wang Chin-I
(Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan)
,
Lin Hsin-Chih
(Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan)
,
Chen Miin-Jang
(Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
122
号:
9
ページ:
095103-095103-5
発行年:
2017年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)