文献
J-GLOBAL ID:201902235687504885
整理番号:19A0034902
炭化ケイ素MOSFETパワーデバイスにおける過渡ゲート源過電圧の解析【JST・京大機械翻訳】
Analysis of Transient Gate-Source OverVoltages in Silicon Carbide MOSFET Power Devices
著者 (8件):
Pulvirenti Mario
(Power Transistor Division, STMicroelectronics, Catania, Italy)
,
Montoro Gionatan
(Power Transistor Division, STMicroelectronics, Catania, Italy)
,
Nania Massimo
(Power Transistor Division, STMicroelectronics, Catania, Italy)
,
Scollo Rosario
(Power Transistor Division, STMicroelectronics, Catania, Italy)
,
Scelba Giacomo
(DIEEI, University of Catania, Catania, Italy)
,
Cacciato Mario
(DIEEI, University of Catania, Catania, Italy)
,
Scarcella Giuseppe
(DIEEI, University of Catania, Catania, Italy)
,
Salvo Luciano
(DIEEI, University of Catania, Catania, Italy)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
ECCE
ページ:
1895-1902
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)