文献
J-GLOBAL ID:201902239742526592
整理番号:19A0299699
HfO_2/TaO_x二層構造に基づく自己整流抵抗スイッチング素子【JST・京大機械翻訳】
A Self-Rectifying Resistive Switching Device Based on HfO2/TaO $_{{x}}$ Bilayer Structure
著者 (15件):
Ma Haili
(Department of Micro/Nano Electronics, Key Laboratory for Thin Film and Micro Fabrication of Ministry of Education, Shanghai Jiao Tong University, Shanghai, China)
,
Zhang Xumeng
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Wu Facai
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Luo Qing
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Gong Tiancheng
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Yuan Peng
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Xu Xiaoxin
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Liu Yu
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Zhao Shengjie
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Zhang Kaiping
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Lu Cheng
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Zhang Peiwen
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Feng Jie
(Department of Micro/Nano Electronics, Key Laboratory for Thin Film and Micro Fabrication of Ministry of Education, Shanghai Jiao Tong University, Shanghai, China)
,
Lv Hangbing
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
,
Liu Ming
(Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
66
号:
2
ページ:
924-928
発行年:
2019年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)