文献
J-GLOBAL ID:201902242323103998
整理番号:19A1827329
テラビットスケール高密度応用のためのAgイオンメモリセル技術【JST・京大機械翻訳】
Ag Ionic Memory Cell Technology for Terabit-Scale High-DensityApplication
著者 (10件):
Fujii Shosuke
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Ichihara Reika
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Konno Takuya
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Yamaguchi Marina
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Seki Harumi
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Tanaka Hiroki
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Zhao Dandan
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Yoshimura Yoko
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Saitoh Masumi
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
,
Koyama Masato
(Toshiba Memory Corporation, Institute of Memory Technology R&D, Yokkaichi, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
VLSI Circuits
ページ:
T188-T189
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)