文献
J-GLOBAL ID:201902242941472456
整理番号:19A1415664
イオン注入II-VI酸化物半導体における正常および逆欠陥アニーリング【JST・京大機械翻訳】
Normal and reverse defect annealing in ion implanted II-VI oxide semiconductors
著者 (6件):
Azarov Alexander
(Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway)
,
Galeckas Augustinas
(Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway)
,
Wendler Elke
(Friedrich-Schiller-Universitaet Jena, Institut fuer Festkorperphysik, Max-Wien-Platz 1, 07743 Jena, Germany)
,
Ellingsen Josef
(Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway)
,
Monakhov Edouard
(Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway)
,
Svensson Bengt G.
(Department of Physics, Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo, Norway)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
122
号:
11
ページ:
115701-115701-5
発行年:
2017年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)