文献
J-GLOBAL ID:201902244992995615
整理番号:19A0402288
六方晶系窒化ホウ素バッファ層によるSiO_2上のグラフェンの成長【JST・京大機械翻訳】
Growth of graphene on SiO2 with hexagonal boron nitride buffer layer
著者 (5件):
Entani Shiro
(Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292, Japan)
,
Takizawa Masaru
(Department of Physical Sciences, Faculty of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan)
,
Li Songtian
(Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292, Japan)
,
Naramoto Hiroshi
(Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292, Japan)
,
Sakai Seiji
(Quantum Beam Science Research Directorate, National Institutes for Quantum and Radiological Science and Technology, Takasaki, Gunma 370-1292, Japan)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
475
ページ:
6-11
発行年:
2019年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)