文献
J-GLOBAL ID:201902246065276136
整理番号:19A0660340
二次元材料ベースデバイスのためのMOS_2上のサブ10nm可変同調ハイブリッド誘電工学【JST・京大機械翻訳】
Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices
著者 (10件):
Cheng Lanxia
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
,
Lee Jaebeom
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
,
Zhu Hui
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
,
Ravichandran Arul Vigneswar
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
,
Wang Qingxiao
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
,
Lucero Antonio T.
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
,
Kim Moon J.
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
,
Wallace Robert M.
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
,
Colombo Luigi
(Texas Instruments, Texas, United States)
,
Kim Jiyoung
(Department of Materials Science and Engineering, The University of Texas at Dallas, Texas, United States)
資料名:
ACS Nano
(ACS Nano)
巻:
11
号:
10
ページ:
10243-10252
発行年:
2017年
JST資料番号:
W2326A
ISSN:
1936-0851
CODEN:
ANCAC3
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)