文献
J-GLOBAL ID:201902246109401068
整理番号:19A0511100
Siベース光検出器のための深溝完全吸収体によるホットElectron抽出のブースティング【JST・京大機械翻訳】
Boosting Hot-Electron Extraction Through Deep Groove Perfect Absorber for Si-Based Photodetector
著者 (7件):
Yang Meng
(Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Ren Fang-Fang
(Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Xiao Long
(Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Pu Lin
(Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Wang Junzhuan
(Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Li Yun
(Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
,
Shi Yi
(Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, China)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
29
号:
21
ページ:
1884-1887
発行年:
2017年
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)