文献
J-GLOBAL ID:201902246475020313
整理番号:19A2615988
一段階プラズマ増強原子層堆積による高品質GaO_xN_y膜の組成と特性制御成長【JST・京大機械翻訳】
Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition
著者 (10件):
Ma Hong-Ping
(State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China)
,
Li Xiao-Xi
(State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China)
,
Yang Jia-He
(State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China)
,
Cheng Peihong
(School of Physical Science and Technology, Shanghai Tech University, China)
,
Huang Wei
(State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China)
,
Zhu Jingtao
(Institute of Precision Optical Engineering, School of Physics Science and Engineering, Tongji University, China)
,
Jen Tien-Chien
(University of Johannesburg, South Africa)
,
Guo Qixin
(Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Japan)
,
Lu Hong-Liang
(State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China)
,
Zhang David Wei
(State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, China)
資料名:
Chemistry of Materials
(Chemistry of Materials)
巻:
31
号:
18
ページ:
7405-7416
発行年:
2019年
JST資料番号:
T0893A
ISSN:
0897-4756
CODEN:
CMATEX
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)