文献
J-GLOBAL ID:201902247028207396
整理番号:19A1408289
MOS_2厚さ変調ITO/MOS_2/p-Siヘテロ接合で観測した大きな横方向光起電力【JST・京大機械翻訳】
Large Lateral Photovoltage Observed in MoS2 Thickness-Modulated ITO/MoS2/p-Si Heterojunctions
著者 (7件):
Qiao Shuang
(Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, P. R. China)
,
Zhang Bin
(Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, P. R. China)
,
Feng Kaiyu
(Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, P. R. China)
,
Cong Ridong
(Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, P. R. China)
,
Yu Wei
(Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, P. R. China)
,
Fu Guangsheng
(Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, P. R. China)
,
Wang Shufang
(Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, P. R. China)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
9
号:
21
ページ:
18377-18387
発行年:
2017年05月31日
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)