文献
J-GLOBAL ID:201902247196636525
整理番号:19A0511130
狭線幅酸化物閉込め不均一集積Si/III-V半導体レーザ【JST・京大機械翻訳】
Narrow-Linewidth Oxide-Confined Heterogeneously Integrated Si/III-V Semiconductor Lasers
著者 (7件):
Wang Huolei
(Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, USA)
,
Kim Dongwan
(Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, USA)
,
Harfouche Mark
(Department of Electrical Engineering, California Institute of Technology Pasadena, CA, USA)
,
Santis Christos T.
(Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, USA)
,
Satyan Naresh
(Telaris Inc, Santa Monica, CA, USA)
,
Rakuljic George
(Telaris Inc, Santa Monica, CA, USA)
,
Yariv Amnon
(Department of Applied Physics and Materials Science and the Department of Electrical Engineering, California Institute of Technology, Pasadena, California, USA)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
29
号:
24
ページ:
2199-2202
発行年:
2017年
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)