文献
J-GLOBAL ID:201902248118851527
整理番号:19A1771084
740~770nmにおける直接放出によるAlGaAs/AlGaInP VECsels【JST・京大機械翻訳】
AlGaAs/AlGaInP VECSELs With Direct Emission at 740-770 nm
著者 (7件):
Nechay Kostiantyn
(Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland)
,
Kahle Hermann
(Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland)
,
Penttinen Jussi-Pekka
(Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland)
,
Rajala Patrik
(Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland)
,
Tukiainen Antti
(Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland)
,
Ranta Sanna
(Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland)
,
Guina Mircea
(Optoelectronics Research Centre, Physics Unit, Tampere University, Tampere, Finland)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
31
号:
15
ページ:
1245-1248
発行年:
2019年
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)