文献
J-GLOBAL ID:201902250214531848
整理番号:19A2368666
ジチアゾリルチエノチオフェンビシミド n型半導性重合体のための新規Electron-欠損構築単位【JST・京大機械翻訳】
Dithiazolylthienothiophene Bisimide: A Novel Electron-Deficient Building Unit for N-Type Semiconducting Polymers
著者 (8件):
Teshima Yoshikazu
(Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Hiroshima, Japan)
,
Saito Masahiko
(Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Hiroshima, Japan)
,
Fukuhara Tomohiro
(Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Japan)
,
Mikie Tsubasa
(Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Hiroshima, Japan)
,
Komeyama Kimihiro
(Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Hiroshima, Japan)
,
Yoshida Hiroto
(Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Hiroshima, Japan)
,
Ohkita Hideo
(Department of Polymer Chemistry, Graduate School of Engineering, Kyoto University, Japan)
,
Osaka Itaru
(Department of Applied Chemistry, Graduate School of Engineering, Hiroshima University, Hiroshima, Japan)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
11
号:
26
ページ:
23410-23416
発行年:
2019年
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)