文献
J-GLOBAL ID:201902251603725777
整理番号:19A1822432
パワーデバイス応用のための0.76mω ・cm2比抵抗を有するノーマリオフ3ゲートGaN MIS-HEMT【JST・京大機械翻訳】
Normally-Off Tri-Gate GaN MIS-HEMTs with 0.76 mΩ・cm2 Specific On-Resistance for Power Device Applications
著者 (12件):
Wu Chia-Hsun
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Chen Jian-You
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Han Ping-Cheng
(International College of Semiconductor Technology, National Chiao Tung University, Hsinchu, Taiwan)
,
Lee Ming-Wen
(International College of Semiconductor Technology, National Chiao Tung University, Hsinchu, Taiwan)
,
Yang Kun-Sheng
(Institute of Photonic System, National Chiao Tung University, Hsinchu, Taiwan)
,
Wang Huan-Chung
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Chang Po-Chun
(Department of Electronic Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Luc Quang Ho
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Lin Yueh-Chin
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
,
Dee Chang-Fu
(Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi, Malaysia.)
,
Hamzah Azrul Azlan
(Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi, Malaysia.)
,
Chang Edward Yi
(Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
66
号:
8
ページ:
3441-3446
発行年:
2019年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)