文献
J-GLOBAL ID:201902253112819111
整理番号:19A0660994
ピエゾ-フォトトロニック効果による近赤外シリコン光センシングの大幅な改善【JST・京大機械翻訳】
Largely Improved Near-Infrared Silicon-Photosensing by the Piezo-Phototronic Effect
著者 (10件):
Dai Yejing
(School of Materials Science and Engineering, Georgia Institute of Technology, Georgia, United States)
,
Dai Yejing
(Key Laboratory of Advanced Ceramics and Machining Technology, Ministry of Education, School of Materials Science and Engineering, Tianjin University, China)
,
Wang Xingfu
(School of Materials Science and Engineering, Georgia Institute of Technology, Georgia, United States)
,
Peng Wenbo
(School of Materials Science and Engineering, Georgia Institute of Technology, Georgia, United States)
,
Zou Haiyang
(School of Materials Science and Engineering, Georgia Institute of Technology, Georgia, United States)
,
Yu Ruomeng
(School of Materials Science and Engineering, Georgia Institute of Technology, Georgia, United States)
,
Ding Yong
(School of Materials Science and Engineering, Georgia Institute of Technology, Georgia, United States)
,
Wu Changsheng
(School of Materials Science and Engineering, Georgia Institute of Technology, Georgia, United States)
,
Wang Zhong Lin
(School of Materials Science and Engineering, Georgia Institute of Technology, Georgia, United States)
,
Wang Zhong Lin
(Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, China)
資料名:
ACS Nano
(ACS Nano)
巻:
11
号:
7
ページ:
7118-7125
発行年:
2017年
JST資料番号:
W2326A
ISSN:
1936-0851
CODEN:
ANCAC3
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)