文献
J-GLOBAL ID:201902253851734297
整理番号:19A0898937
神経形態応用のためのTaO_xベースRRAMデバイスにおけるI-V線形性の研究【JST・京大機械翻訳】
Investigation of $I-V$ Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications
著者 (9件):
Sung Changhyuck
(Department of Material Science and Engineering, Center for Single Atom-Based Semiconductor Device, Pohang University of Science and Technology, Pohang, South Korea)
,
Padovani Andrea
(MDLab s.r.l., Reggio Emilia, Italy)
,
Beltrando Bastien
(IM2NP, CNRS, UMR 7334, Aix-Marseille Universite ́, Marseille, France)
,
Lee Donguk
(Department of Material Science and Engineering, Center for Single Atom-Based Semiconductor Device, Pohang University of Science and Technology, Pohang, South Korea)
,
Kwak Myunghoon
(Department of Material Science and Engineering, Center for Single Atom-Based Semiconductor Device, Pohang University of Science and Technology, Pohang, South Korea)
,
Lim Seokjae
(Department of Material Science and Engineering, Center for Single Atom-Based Semiconductor Device, Pohang University of Science and Technology, Pohang, South Korea)
,
Larcher Luca
(Dipartimento di Scienze e Metodi dell’Ingegneria, Universita di Modena e Reggio Emilia, Reggio Emilia, Italy)
,
Della Marca Vincenzo
(IM2NP, CNRS, UMR 7334, Aix-Marseille Universite ́, Marseille, France)
,
Hwang Hyunsang
(Department of Material Science and Engineering, Center for Single Atom-Based Semiconductor Device, Pohang University of Science and Technology, Pohang, South Korea)
資料名:
IEEE Journal of the Electron Devices Society
(IEEE Journal of the Electron Devices Society)
巻:
7
ページ:
404-408
発行年:
2019年
JST資料番号:
W2429A
ISSN:
2168-6734
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)