文献
J-GLOBAL ID:201902254582217177
整理番号:19A1414984
ランダム電信信号法を用いた電荷トラップフラッシュメモリにおける窒化物正孔横方向輸送の特性評価【JST・京大機械翻訳】
Characterization of nitride hole lateral transport in a charge trap flash memory by using a random telegraph signal method
著者 (8件):
Liu Yu-Heng
(Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan)
,
Jiang Cheng-Min
(Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan)
,
Lin Hsiao-Yi
(Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan)
,
Wang Tahui
(Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu 300, Taiwan)
,
Tsai Wen-Jer
(Macronix International Company, Ltd., No. 16, Li-Hsin Road, Science Based Industrial Park, Hsinchu 300, Taiwan)
,
Lu Tao-Cheng
(Macronix International Company, Ltd., No. 16, Li-Hsin Road, Science Based Industrial Park, Hsinchu 300, Taiwan)
,
Chen Kuang-Chao
(Macronix International Company, Ltd., No. 16, Li-Hsin Road, Science Based Industrial Park, Hsinchu 300, Taiwan)
,
Lu Chih-Yuan
(Macronix International Company, Ltd., No. 16, Li-Hsin Road, Science Based Industrial Park, Hsinchu 300, Taiwan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
3
ページ:
033501-033501-4
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)