文献
J-GLOBAL ID:201902257138146055
整理番号:19A2168908
フレキシブルオプトエレクトロニクスデバイスにおける2D Ga_2O_3のポテンシャルの理解:一軸歪と電場の影響【JST・京大機械翻訳】
Understanding the Potential of 2D Ga2O3 in Flexible Optoelectronic Devices: Impact of Uniaxial Strain and Electric Field
著者 (8件):
Guo Rui
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China)
,
Su Jie
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China)
,
Lin Zhenhua
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China)
,
Zhang Junjing
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China)
,
Qin Yu
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China)
,
Zhang Jincheng
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China)
,
Chang Jingjing
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China)
,
Hao Yue
(State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Shaanxi Joint Key Laboratory of Graphene, School of Microelectronics, Xidian University, 2 South Taibai Road, Xi’an, 710071, China)
資料名:
Advanced Theory and Simulations
(Advanced Theory and Simulations)
巻:
2
号:
9
ページ:
e1900106
発行年:
2019年
JST資料番号:
W2665A
ISSN:
2513-0390
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)