文献
J-GLOBAL ID:201902257331629499
整理番号:19A2301323
高性能光検出器としての三次元グラフェン電界効果トランジスタ【JST・京大機械翻訳】
Three-Dimensional Graphene Field-Effect Transistors as High-Performance Photodetectors
著者 (14件):
Deng Tao
(School of Electronic and Information Engineering, Beijing Jiaotong University, China)
,
Deng Tao
(Institute of Microelectronics, Tsinghua University)
,
Zhang Zhaohao
(Institute of Microelectronics, Tsinghua University)
,
Zhang Zhaohao
(Key Laboratory of Microelectronics Devices & Integrated Technology, IC Advanced Process R&D Center, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS), China)
,
Liu Yaxuan
(School of Electronic and Information Engineering, Beijing Jiaotong University, China)
,
Wang Yingxin
(Key Laboratory of Particle & Radiation Imaging, Ministry of Education, Department of Engineering Physics, Tsinghua University)
,
Su Fang
(School of Electronic and Information Engineering, Beijing Jiaotong University, China)
,
Li Shasha
(School of Electronic and Information Engineering, Beijing Jiaotong University, China)
,
Zhang Yang
(School of Electronic and Information Engineering, Beijing Jiaotong University, China)
,
Li Hao
(Department of Electronic Engineering, Tsinghua University)
,
Chen Houjin
(School of Electronic and Information Engineering, Beijing Jiaotong University, China)
,
Zhao Ziran
(Key Laboratory of Particle & Radiation Imaging, Ministry of Education, Department of Engineering Physics, Tsinghua University)
,
Li Yue
(Department of Electronic Engineering, Tsinghua University)
,
Liu Zewen
(Institute of Microelectronics, Tsinghua University)
資料名:
Nano Letters
(Nano Letters)
巻:
19
号:
3
ページ:
1494-1503
発行年:
2019年
JST資料番号:
W1332A
ISSN:
1530-6984
CODEN:
NALEFD
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)