文献
J-GLOBAL ID:201902257582753175
整理番号:19A0036950
単一RRAMデバイスによるニューロン活動電位の実際的模倣【JST・京大機械翻訳】
Actually Mimicking of Neuron Action Potential by A Single RRAM Device
著者 (8件):
Wang Bowen
(Institute of Microelectronics, Peking University, Beijing, 100871, China)
,
Wang Zongwei
(Institute of Microelectronics, Peking University, Beijing, 100871, China)
,
Fang Yichen
(Institute of Microelectronics, Peking University, Beijing, 100871, China)
,
Chen Qingyu
(Institute of Microelectronics, Peking University, Beijing, 100871, China)
,
Bao Lin
(Institute of Microelectronics, Peking University, Beijing, 100871, China)
,
Yang Yuchao
(Institute of Microelectronics, Peking University, Beijing, 100871, China)
,
Cai Yimao
(Institute of Microelectronics, Peking University, Beijing, 100871, China)
,
Huang Ru
(Institute of Microelectronics, Peking University, Beijing, 100871, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
ICSICT
ページ:
1-3
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)