文献
J-GLOBAL ID:201902258610992512
整理番号:19A0123478
Ti/Hf/HfO_2/Au ReRAMデバイスに及ぼすHf層厚の影響に関する研究【JST・京大機械翻訳】
Study on Effect of Hf Layer Thickness on Ti/Hf/HfO 2/Au ReRAM Device
著者 (6件):
Nakajima Ryo
(Kansai University, Graduate School of Science and Engineering, Suita, Osaka, 564-8680, Japan)
,
Azuma Atsushi
(Kansai University, Graduate School of Science and Engineering, Suita, Osaka, 564-8680, Japan)
,
Yoshida Hayato
(Kansai University, Graduate School of Science and Engineering, Suita, Osaka, 564-8680, Japan)
,
Shimizu Tomohiro
(Kansai University, Graduate School of Science and Engineering, Suita, Osaka, 564-8680, Japan)
,
Ito Takeshi
(Kansai University, Graduate School of Science and Engineering, Suita, Osaka, 564-8680, Japan)
,
Shingubara Shoso
(Kansai University, Graduate School of Science and Engineering, Suita, Osaka, 564-8680, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
IMFEDK
ページ:
1-2
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)