文献
J-GLOBAL ID:201902260179618946
整理番号:19A1414561
GaN光電極における多孔性増強太陽光発電水素発生【JST・京大機械翻訳】
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
著者 (5件):
Hou Y.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Ahmed Syed Z.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Jiu L.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Bai J.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
,
Wang T.
(Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
20
ページ:
203901-203901-5
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)