文献
J-GLOBAL ID:201902260431768449
整理番号:19A2114552
InAs/GaSbコア/シェルナノワイヤのゲート調整可能なエネルギーギャップと負の磁気抵抗【JST・京大機械翻訳】
Gate tunable energy gap and negative magnetoresistance of InAs/GaSb core/shell nanowires
著者 (6件):
Pan Zhencun
(Beijing Key Laboratory of Quantum Devices, Key laboratory for the Physics and Chemistry of Nanodevices, Peking University, China)
,
Huang Shaoyun
(Beijing Key Laboratory of Quantum Devices, Key laboratory for the Physics and Chemistry of Nanodevices, Peking University, China)
,
Zhou Yifeng
(Beijing Key Laboratory of Quantum Devices, Key laboratory for the Physics and Chemistry of Nanodevices, Peking University, China)
,
Pan Dong
(State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Zhao Jianhua
(State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, China)
,
Xu Hongqi
(Beijing Key Laboratory of Quantum Devices, Key laboratory for the Physics and Chemistry of Nanodevices, Peking University, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
CSW
ページ:
1
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)