文献
J-GLOBAL ID:201902260621966900
整理番号:19A0035656
極低温における1.2kV SiCパワーMOSFETの特性評価【JST・京大機械翻訳】
Characterization of 1.2 kV SiC Power MOSFETs at Cryogenic Temperatures
著者 (10件):
Gui Handong
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Ren Ren
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Zhang Zheyu
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Chen Ruirui
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Niu Jiahao
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Wang Fred
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Tolbert Leon M.
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Blalock Benjamin J.
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Costinett Daniel J.
(The University of Tennessee, Min H. Kao Department of Electrical Engineering and Computer Science, Knoxville, TN, USA)
,
Choi Benjamin B.
(NASA Glenn Research Center, Cleveland, OH, USA)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2018
号:
ECCE
ページ:
7010-7015
発行年:
2018年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)