文献
J-GLOBAL ID:201902260698890642
整理番号:19A2223851
原子層蒸着酸化アルミニウムによる検出器グレードのフロートゾーンシリコンの不動態化【JST・京大機械翻訳】
Passivation of Detector-Grade Float Zone Silicon with Atomic Layer Deposited Aluminum Oxide
著者 (7件):
Ott Jennifer
(Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland)
,
Ott Jennifer
(Helsinki Institute of Physics, University of Helsinki, Gustaf Haellstromin katu 2, FI-00014, Helsinki, Finland)
,
Pasanen Toni P.
(Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland)
,
Repo Paeivikki
(Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland)
,
Seppaenen Heli
(Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland)
,
Vaehaenissi Ville
(Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland)
,
Savin Hele
(Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, Espoo, FI-02150, Finland)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
216
号:
17
ページ:
e1900309
発行年:
2019年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)