文献
J-GLOBAL ID:201902262260437922
整理番号:19A0660700
広帯域光応答による高品質半導体二次元層状InSeのウエハスケール合成【JST・京大機械翻訳】
Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse
著者 (12件):
Yang Zhibin
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China)
,
Yang Zhibin
(The Hong Kong Polytechnic University Shenzhen Research Institute, P. R. China)
,
Jie Wenjing
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China)
,
Jie Wenjing
(The Hong Kong Polytechnic University Shenzhen Research Institute, P. R. China)
,
Mak Chun-Hin
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China)
,
Lin Shenghuang
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China)
,
Lin Huihong
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China)
,
Yang Xianfeng
(Analytical and Testing Center, South China University of Technology, P. R. China)
,
Yan Feng
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China)
,
Lau Shu Ping
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China)
,
Hao Jianhua
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, P. R. China)
,
Hao Jianhua
(The Hong Kong Polytechnic University Shenzhen Research Institute, P. R. China)
資料名:
ACS Nano
(ACS Nano)
巻:
11
号:
4
ページ:
4225-4236
発行年:
2017年
JST資料番号:
W2326A
ISSN:
1936-0851
CODEN:
ANCAC3
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)