文献
J-GLOBAL ID:201902262627705205
整理番号:19A0528017
二重エミッタ低減表面電界水平電流バイポーラトランジスタの電気性能に及ぼす局所p井戸基板パラメータの影響【JST・京大機械翻訳】
Impact of the local p-well substrate parameters on the electrical performance of the Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor
著者 (3件):
Koricic Marko
(University of Zagreb, Faculty of Electrical Engineering and Computing, Department of Electronics, Microelectronics, Computing and Intelligent Systems, Micro and Nano Electronics Laboratory, Croatia)
,
Zilak Josip
(University of Zagreb, Faculty of Electrical Engineering and Computing, Department of Electronics, Microelectronics, Computing and Intelligent Systems, Micro and Nano Electronics Laboratory, Croatia)
,
Suligoj Tomislav
(University of Zagreb, Faculty of Electrical Engineering and Computing, Department of Electronics, Microelectronics, Computing and Intelligent Systems, Micro and Nano Electronics Laboratory, Croatia)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
MIPRO
ページ:
83-87
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)