文献
J-GLOBAL ID:201902265476776637
整理番号:19A1604741
超高電圧CSL pチャネル4H-SiC IGBTの設計と最適化【JST・京大機械翻訳】
Design and Optimization of Ultrahigh Voltage CSL p-channel 4H-SiC IGBT
著者 (9件):
Lu Xiaofei
(University of Electronic Science and Technology of China, Chengdu, Sichuan Province, China)
,
Tian Xiaoli
(Institute of Microelectronics of the Chinses Academy of Sciences, Beijing, China)
,
Deng Xiaochuan
(University of Electronic Science and Technology of China, Chengdu, Sichuan Province, China)
,
Bai Yun
(Institute of Microelectronics of the Chinses Academy of Sciences, Beijing, China)
,
Zhang Jinping
(University of Electronic Science and Technology of China, Chengdu, Sichuan Province, China)
,
Li Xuan
(University of Electronic Science and Technology of China, Chengdu, Sichuan Province, China)
,
Lu Jiang
(Institute of Microelectronics of the Chinses Academy of Sciences, Beijing, China)
,
Zhu Hao
(University of Electronic Science and Technology of China, Chengdu, Sichuan Province, China)
,
Zhong Wei
(University of Electronic Science and Technology of China, Chengdu, Sichuan Province, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2019
号:
EDSSC
ページ:
1-3
発行年:
2019年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)