文献
J-GLOBAL ID:201902267715629528
整理番号:19A1416271
再結合再解釈のABCモデル:InGaN/GaN発光ダイオードにおけるキャリア輸送と効率低下の理解への影響【JST・京大機械翻訳】
The ABC model of recombination reinterpreted: Impact on understanding carrier transport and efficiency droop in InGaN/GaN light emitting diodes
著者 (5件):
Hopkins M. A.
(Department of Electronic and Electrical Engineering, University of Bath, Bath, United Kingdom)
,
Allsopp D. W. E.
(Department of Electronic and Electrical Engineering, University of Bath, Bath, United Kingdom)
,
Kappers M. J.
(Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 OFS, United Kingdom)
,
Oliver R. A.
(Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 OFS, United Kingdom)
,
Humphreys C. J.
(Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 OFS, United Kingdom)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
122
号:
23
ページ:
234505-234505-8
発行年:
2017年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)