文献
J-GLOBAL ID:201902269387141675
整理番号:19A1941032
4H-SiC結晶の溶液成長におけるマクロ欠陥を抑制するための温度分布の制御【JST・京大機械翻訳】
Control of temperature distribution to suppress macro-defects in solution growth of 4H-SiC crystals
著者 (5件):
Hayashi Yuichiro
(National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan)
,
Mitani Takeshi
(National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan)
,
Komatsu Naoyoshi
(National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan)
,
Kato Tomohisa
(National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan)
,
Okumura Hajime
(National Institute of Advanced Industrial Science and Technology, 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
523
ページ:
Null
発行年:
2019年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)