文献
J-GLOBAL ID:201902274072903753
整理番号:19A0528016
水平電流バイポーラトランジスタ(HCBT)のホットキャリア誘起劣化の解析【JST・京大機械翻訳】
Analysis of hot carrier-induced degradation of Horizontal Current Bipolar Transistor (HCBT)
著者 (3件):
Zilak J.
(University of Zagreb, Faculty of Electrical Engineering and Computing, Department of Electronics, Microelectronics, Computing and Intelligent Systems, Micro and Nano Electronics Laboratory, Croatia)
,
Koricic M.
(University of Zagreb, Faculty of Electrical Engineering and Computing, Department of Electronics, Microelectronics, Computing and Intelligent Systems, Micro and Nano Electronics Laboratory, Croatia)
,
Suligoj T.
(University of Zagreb, Faculty of Electrical Engineering and Computing, Department of Electronics, Microelectronics, Computing and Intelligent Systems, Micro and Nano Electronics Laboratory, Croatia)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
MIPRO
ページ:
77-82
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)