文献
J-GLOBAL ID:201902276231989797
整理番号:19A1887168
MOS_2-溶媒界面の定量的モデリング:分子動力学を用いた接触角と剥離性能の予測【JST・京大機械翻訳】
Quantitative Modeling of MoS2-Solvent Interfaces: Predicting Contact Angles and Exfoliation Performance using Molecular Dynamics
著者 (8件):
Sresht Vishnu
(Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts, United States)
,
Govind Rajan Ananth
(Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts, United States)
,
Bordes Emilie
(Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts, United States)
,
Bordes Emilie
(Institut de Chimie de Clermont-Ferrand, Universite Blaise Pascal and CNRS, France)
,
Strano Michael S.
(Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts, United States)
,
Padua Agilio A.H.
(Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts, United States)
,
Padua Agilio A.H.
(Institut de Chimie de Clermont-Ferrand, Universite Blaise Pascal and CNRS, France)
,
Blankschtein Daniel
(Department of Chemical Engineering, Massachusetts Institute of Technology, Massachusetts, United States)
資料名:
Journal of Physical Chemistry C
(Journal of Physical Chemistry C)
巻:
121
号:
16
ページ:
9022-9031
発行年:
2017年
JST資料番号:
W1877A
ISSN:
1932-7447
CODEN:
JPCCCK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)