文献
J-GLOBAL ID:201902277507473267
整理番号:19A1415150
SiO_2/SiN_x/SiO_2バッファを持つ非晶質InGaZnO薄膜トランジスタのデバイス性能と安定性特性に及ぼす水素の影響【JST・京大機械翻訳】
Effect of hydrogen on the device performance and stability characteristics of amorphous InGaZnO thin-film transistors with a SiO2/SiNx/SiO2 buffer
著者 (5件):
Han Ki-Lim
(Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro Seongdong-gu, Seoul 04763, South Korea)
,
Ok Kyung-Chul
(Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro Seongdong-gu, Seoul 04763, South Korea)
,
Cho Hyeon-Su
(Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro Seongdong-gu, Seoul 04763, South Korea)
,
Oh Saeroonter
(Division of Electrical Engineering, Hanyang University, Ansan, Gyeonggi-do, 15588, South Korea)
,
Park Jin-Seong
(Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro Seongdong-gu, Seoul 04763, South Korea)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
111
号:
6
ページ:
063502-063502-5
発行年:
2017年
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)