文献
J-GLOBAL ID:201902278210183168
整理番号:19A1409305
グラフェン上の超薄HfO_2膜の原子層堆積成長【JST・京大機械翻訳】
Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene
著者 (4件):
Xiao Mengmeng
(Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, China)
,
Qiu Chenguang
(Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, China)
,
Zhang Zhiyong
(Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, China)
,
Peng Lian-Mao
(Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, China)
資料名:
ACS Applied Materials & Interfaces
(ACS Applied Materials & Interfaces)
巻:
9
号:
39
ページ:
34050-34056
発行年:
2017年10月04日
JST資料番号:
W2329A
ISSN:
1944-8244
CODEN:
AAMICK
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)