文献
J-GLOBAL ID:201902279020831405
整理番号:19A0645580
β-Ga_2O_3/p型4H-SiCヘテロ接合ダイオードと深紫外フォトダイオードへの応用【JST・京大機械翻訳】
β-Ga2O3/p-Type 4H-SiC Heterojunction Diodes and Applications to Deep-UV Photodiodes
著者 (4件):
Nakagomi Shinji
(Faculty of Science and Engineering, Department of Information Technology and Electronics, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan)
,
Sakai Toshihide
(Faculty of Science and Engineering, Department of Information Technology and Electronics, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan)
,
Kikuchi Kentaro
(Faculty of Science and Engineering, Department of Information Technology and Electronics, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan)
,
Kokubun Yoshihiro
(Faculty of Science and Engineering, Department of Information Technology and Electronics, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
216
号:
5
ページ:
e1700796
発行年:
2019年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)