文献
J-GLOBAL ID:201902280944653857
整理番号:19A1332239
ゾル-ゲル処理SnO_2薄膜トランジスタの環境安定性を改善する方法としての緻密化制御【JST・京大機械翻訳】
Densification Control as a Method of Improving the Ambient Stability of Sol-Gel-Processed SnO2 Thin-Film Transistors
著者 (7件):
Lee Won-Yong
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Ha Seung Hyun
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Lee Hyunjae
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Bae Jin-Hyuk
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
,
Jang Bongho
(Department of Information and Communication Engineering, DGIST, Daegu, South Korea)
,
Kwon Hyuk-Jun
(Department of Information and Communication Engineering, DGIST, Daegu, South Korea)
,
Jang Jaewon
(School of Electronics Engineering, Kyungpook National University, Daegu, South Korea)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
40
号:
6
ページ:
905-908
発行年:
2019年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)