文献
J-GLOBAL ID:201902281435750679
整理番号:19A1416129
原子層堆積によるGaN(0001)上の立方晶結晶酸化エルビウム成長【JST・京大機械翻訳】
Cubic crystalline erbium oxide growth on GaN(0001) by atomic layer deposition
著者 (7件):
Chen Pei-Yu
(Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA)
,
Posadas Agham B.
(Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA)
,
Kwon Sunah
(Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA)
,
Wang Qingxiao
(Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA)
,
Kim Moon J.
(Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA)
,
Demkov Alexander A.
(Department of Physics, The University of Texas at Austin, Austin, Texas 78712, USA)
,
Ekerdt John G.
(Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712, USA)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
122
号:
21
ページ:
215302-215302-10
発行年:
2017年
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)