文献
J-GLOBAL ID:201902282524664996
整理番号:19A1586915
n型半導体特性を有するFドープTi/Co_3O_4電極の作製と光電気化学性能に関する研究【JST・京大機械翻訳】
Study on the fabrication and photoelectrochemical performance of the F- doped Ti/Co3O4 electrodes with n-type semiconductor characteristics
著者 (9件):
Ma Hongchao
(School of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian, People’s Republic of China)
,
Wang Xiaoqin
(School of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian, People’s Republic of China)
,
Fu Yinghuan
(School of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian, People’s Republic of China)
,
Fu Yinghuan
(School of Chemistry Engineering and Material, Dalian Polytechnic University, Dalian, People’s Republic of China)
,
Zhang Yanan
(School of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian, People’s Republic of China)
,
Ma Chun
(School of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian, People’s Republic of China)
,
Dong Xiaoli
(School of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian, People’s Republic of China)
,
Yu Zhihui
(School of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian, People’s Republic of China)
,
Yu Zhihui
(School of Chemistry Engineering and Material, Dalian Polytechnic University, Dalian, People’s Republic of China)
資料名:
Journal of Solid State Electrochemistry
(Journal of Solid State Electrochemistry)
巻:
23
号:
6
ページ:
1767-1777
発行年:
2019年
JST資料番号:
W1021A
ISSN:
1432-8488
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)