文献
J-GLOBAL ID:201902282667305498
整理番号:19A2500132
In_2S_3ドープGe_2Sb_2Te_5膜の絶縁体-金属転移によるマルチレベル貯蔵性能の改善【JST・京大機械翻訳】
Improved multi-level storage performance by insulator-metal transition of In2S3-doped Ge2Sb2Te5 films
著者 (8件):
Liu Fen
(Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang, 315211, People’s Republic of China)
,
Liu Fen
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang, 315211, People’s Republic of China)
,
Wang Guoxiang
(Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang, 315211, People’s Republic of China)
,
Wang Guoxiang
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang, 315211, People’s Republic of China)
,
Zhang Yawen
(Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang, 315211, People’s Republic of China)
,
Zhang Yawen
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang, 315211, People’s Republic of China)
,
Li Chao
(Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo, Zhejiang, 315211, People’s Republic of China)
,
Li Chao
(Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, Zhejiang, 315211, People’s Republic of China)
資料名:
Ceramics International
(Ceramics International)
巻:
45
号:
18 PA
ページ:
24090-24095
発行年:
2019年
JST資料番号:
H0705A
ISSN:
0272-8842
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)