文献
J-GLOBAL ID:201902285761551791
整理番号:19A2875631
深いトレンチを持つ0.18μmパワー半導体デバイスのゲート酸化物収率の改善:DP 離散およびパワーデバイス【JST・京大機械翻訳】
Gate oxide yield improvement for 0.18μm power semiconductor devices with deep trenches: DP: Discrete and power devices
著者 (15件):
Greenwood B.
(ON Semiconductor, Gresham, OR)
,
Watanabe Y.
(ON Semiconductor, Gunma, Japan)
,
Kanuma Y.
(ON Semiconductor, Gunma, Japan)
,
Takada R.
(ON Semiconductor, Gunma, Japan)
,
Sheng L.
(ON Semiconductor, Pocatello, ID)
,
Gambino J. P.
(ON Semiconductor, Gresham, OR)
,
Whear Oli
(Bruker Semiconductor Division, Bede House, Belmont Business Park, Durham, DH1 1TW, UK)
,
Suhwanov A.
(ON Semiconductor, Gresham, OR)
,
Daniel D.
(ON Semiconductor, Gresham, OR)
,
Menon S.
(ON Semiconductor, Gresham, OR)
,
Price D.
(ON Semiconductor, Gresham, OR)
,
Hose S.
(ON Semiconductor, Gresham, OR)
,
Guo J.
(ON Semiconductor, Gresham, OR)
,
Piatt G.
(ON Semiconductor, Gresham, OR)
,
Lu M.
(ON Semiconductor, Gresham, OR)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ASMC
ページ:
346-351
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)